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OP232

型號(hào):

產(chǎn)品時(shí)間:2024-10-17

產(chǎn)品資料:

簡要描述:

Each OP232 device in this series is a gallium aluminum arsenide (GaAIAs) infrared emi?ng diode, mounted in a herme?c metal TO‐46 housing.

詳細(xì)介紹

OP232

The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applica?ons in conjunc?on with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.

 


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